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FQA62N25C is a 250V N-channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.035Ω @VGS = 10 V, low gate charge, low Crss, fast switching, 100% avalanche testing and improved dv/dt capability.
This document describes the features and characteristics of Fairchild's FQA65N20 QFET TM FQA65N20 200V N-Channel MOSFET, including low on-state resistance, superior switching performance, and reliability under high energy pulses. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply, and motor control.
This document describes the features and characteristics of the FQA6N90C_F109 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 6A current, 900V voltage, low gate charge and Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.
This document describes the features and characteristics of the FQA70N10 N-Channel MOSFET product produced by Fairchild Semiconductor International. These products are made using advanced DMOS technology, which offers low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The document introduces QFET, a novel power device for power electronic systems. QFET has the advantages of high switching speed, low on-resistance, high breakdown voltage and wide bandgap, which makes it promising for wide application in power electronic systems.
This document describes the features and characteristics of the FQA7N80C_F109 800V N-Channel MOSFET, including low gate charge, fast switching, and improved dv/dt capability.
This document describes the features of the FQA8N90C_F109 900V N-Channel MOSFET, including 8A current, 1.9Ω RDS(on), low gate charge, fast switching, etc.
This document describes the features and characteristics of FQH90N15 / FQA90N15 N-Channel Power MOSFET, including 90A current, 150V voltage, low RDS(on) value, low gate charge and Crss value, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.
FQA90N15_F109 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device features RDS(on) = 0.018Ω @VGS = 10 V, low gate charge (typical 220nC), low Crss (typical 200pF), fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating, and RoHS compliance.
This document describes the features and characteristics of the FQA9N90_F109 900V N-Channel MOSFET, including parameters such as current, voltage, and switching speed.
FQD19N10L/FQU19N10L is a 100V logic N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse endurance, and is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
