The FDS6682 is a 30V N-Channel PowerTrench MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
This document is a datasheet for the Fairchild Semiconductor FDS6682, a 30V N-Channel PowerTrench MOSFET designed to improve the efficiency of DC/DC converters. It is optimized for low-side synchronous rectifier operation, offering extremely low on-resistance in a small package. The device features high performance trench technology and high power handling capabilities.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 14 A |
| Pulsed Drain Current | 50 A |
| Power Dissipation (Single Operation) | 2.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 50 °C/W |
| Thermal Resistance (Junction-to-Case) | 25 °C/W |
| Gate Threshold Voltage | 1 to 3 V |
| Static Drain-Source On-Resistance | 5.7 to 75 mΩ |
| Total Gate Charge | 22 nC (Typical) |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Yes, it has been optimized for 'low side' synchronous rectifier operation, providing an extremely low on-resistance in a small package.
The operating and storage junction temperature range is from -55 to +150 °C.