The FDS6681Z is a 30V P-channel PowerTrench® MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
The document describes the Fairchild Semiconductor FDS6681Z, a P-Channel MOSFET produced using the advanced PowerTrench process. It is specifically tailored to minimize on-state resistance and is well-suited for power management and load switching in computers and portable battery packs.
Key features include an extended voltage range of -25V for battery applications, high performance trench technology for low resistance, and HBM ESD protection levels up to 8kV typical. The device also offers high power and current handling capabilities with lead-free termination compliant with ROHS standards.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +25 V |
| Continuous Drain Current | -20 A |
| On-Resistance (Vgs=-4.5 V) | 6.5 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |
Yes, the termination is Lead-free and ROHS Compliant.
The device supports a continuous drain current of -20 A.
The junction can operate between -55°C and +150°C.
It has a maximum power dissipation of 2.5 W for single operation.