FDS6690A is a single N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation using PowerTrench process, which has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document is a technical datasheet for the Fairchild Semiconductor FDS6690A, an N-Channel Logic Level MOSFET produced using the advanced PowerTrench process. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications requiring fast switching and low in-line power loss.
The datasheet provides comprehensive specifications including absolute maximum ratings, electrical characteristics such as drain-source breakdown voltage (30V) and continuous drain current (11A), and thermal data. It also includes typical characteristic curves illustrating on-resistance variation with temperature and gate voltage, capacitance characteristics, and safe operating areas.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 11 A |
| On-Resistance @ Vgs=4.5V, Id=10A | 12.0 mΩ to 17.0 mΩ |
| Package Type | SO-8 |
The operating and storage junction temperature range is -55 to +150 °C.
The thermal resistance, junction-to-ambient (Note 1a) is 50 °CW.