This document introduces the FDY2000PZ Dual P-Channel MOSFET product released by Fairchild Semiconductor in January 2006. This product is designed using the advanced Power Trench process to optimize the RDS(ON) value at VGS = -2.5V. It is suitable for Li-Ion battery packs, with a rated parameter of -350mA, -20V. It also features an ESD protection diode and is RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor FDY2000PZ, a dual P-channel MOSFET utilizing the PowerTrench process. It features an ESD protection diode connected between the gate and source and is RoHS compliant.
The device supports continuous drain currents up to 350 mA with a maximum drain-source voltage of -20 V. Key electrical parameters include a typical on-resistance of 1.2 Ω at Vgs = -4.5V and an input capacitance of 100 pF.
| Drain-Source Voltage (Vdss) | -20 V |
|---|---|
| Gate-Source Voltage (Vgss) | +8 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The static drain-source on-resistance is typically 1.2 Ω when the current is -350 mA and Vgs is -4.5V.
Yes, the document lists 'RoHS Compliant' under the features section.