This document describes the features and absolute maximum ratings of the FDV303N digital field effect transistor, as well as its application in battery circuits and portable electronic devices.
The FDV303N is an N-Channel enhancement mode field effect transistor produced using Fairchild's proprietary DMOS technology. It is specifically designed for low gate drive applications, operating effectively with gate voltages as low as 2.5 volts, making it suitable for 3V circuits.
| Drain-Source Voltage | 25 V |
|---|---|
| Peak Drain Current | 2 A |
| On-State Resistance (Vgs=4.5V) | 0.45 Ohm |
| On-State Resistance (Vgs=2.7V) | 0.6 Ohm |
| Operating Temperature Range | -55 to 150 °C |
| ESD Rating (Human Body Model) | >6kV |
| Package Type | SOT-23 |
The device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Yes, it has very low level gate drive requirements allowing direct operation in 3V circuits.
The maximum power dissipation is 0.35 W.