FDV304P Digital FET P-Channel is an extremely low ON-resistance device with excellent switching speed which can be directly operated on 3V power supply. This device has very high cell density that is tailored to minimize ON-state resistance at low gate drive conditions. This device is specially designed for battery-powered applications such as notebook computers and cellular phones.
This document is a technical datasheet for the Fairchild Semiconductor FDV304P, a P-Channel enhancement mode field effect transistor. The device utilizes proprietary DMOS technology to minimize on-state resistance at low gate drive conditions, making it suitable for 3V circuits found in notebook computers and cellular phones.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and dynamic parameters such as capacitance and switching times. It also includes typical performance curves illustrating on-resistance variation with temperature and drain current.
| Drain-Source Voltage (Vss) | -25 V |
|---|---|
| Continuous Drain Current | -0.46 A |
| Peak Drain Current | -1.5 A |
| On-Resistance (Vgs=-4.5 V) | 0.87 - 1.4 Ohm |
| On-Resistance (Vgs=-2.7 V) | 1.5 Ohm |
| Gate Threshold Voltage Min | -0.65 V |
| Input Capacitance (Ciss) | 63 pF |
The device allows direct operation in 3V circuits with a gate voltage less than 1.5V.
The device operates and stores within a temperature range of -55 to 150 °C.
The device has an Electrostatic Discharge Rating of 6.0 kV according to MIL-STD-883D.