This document details the characteristics of FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET, including applications, features, absolute maximum ratings, electrical characteristics, etc.
This document is a datasheet for the Fairchild Semiconductor FDY101PZ, a Single P-Channel MOSFET designed using the PowerTrench process. It is specified for a drain-source voltage of -20V and a continuous drain current of -150mA. The device includes an integrated ESD protection diode and is RoHS compliant.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves. Key parameters include a gate-source voltage rating of +8V, a power dissipation of 625mW, and a junction temperature range of -55°C to +150°C. It also details thermal resistance, capacitance, switching characteristics, and package dimensions.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | -150 mA |
| Power Dissipation | 625 mW |
| Operating Junction Temperature | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 200 °C/W |
| Gate Threshold Voltage | -0.65 to -1.5 V |
| Input Capacitance | 100 pF |
It is designed for use as an ESD protection diode.
Yes, the device is RoHS compliant.
The maximum operating and storage junction temperature is +150 °C.