FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET, this product has a maximum resistance of 0.5 ohms and can be used for lithium-ion battery packs.
This document is a datasheet for the Fairchild Semiconductor FDY102PZ, a Single P-Channel MOSFET designed using the PowerTrench process. Key specifications include a maximum drain-to-source voltage of -20V and a continuous drain current of 0.83A at a junction temperature of 25°C. The device features HBM ESD protection up to 1400V and is RoHS compliant.
The datasheet provides detailed electrical characteristics, including off-state breakdown voltage, on-state resistance, and switching parameters. It also includes typical performance curves for on-resistance, transfer characteristics, and gate charge, along with a dimensional outline for the SC89-3 package.
| Drain to Source Voltage | -20 V |
|---|---|
| Gate to Source Voltage | +8 V |
| Continuous Drain Current | 0.83 A |
| Power Dissipation | 0.625 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Ambient) | 200 °C/W |
| ESD Protection Level | 1400 V |
The maximum continuous drain current is 0.83 A.
Yes, the device is RoHS compliant.