2N7000BU/2N7000TA is a N-channel small signal MOSFET with fast switching times, improved inductive ruggedness, lower input capacitance, extended safe operating area and improved high temperature reliability.
This document is a datasheet for the Fairchild Semiconductor 2N7000BU and 2N7000TA, which are N-channel small signal MOSFETs. The device is housed in a TO-92 package and features a drain-to-source breakdown voltage of 60V. Key characteristics include fast switching times, improved inductive ruggedness, and a lower input capacitance compared to previous designs. The datasheet also notes extended safe operating area and improved high-temperature reliability.
| Drain-to-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 200 mA |
| Continuous Drain Current (100°C) | 110 mA |
| Pulsed Drain Current | 1000 mA |
| Gate-to-Source Voltage | +30 V |
| Total Power Dissipation (25°C) | 400 mW |
| Operating Junction Temperature Range | -55 to +150 °C |
| Junction-to-Ambient Thermal Resistance | 312.5 °C/W |
| Drain-Source Breakdown Voltage | 60 V |
| Gate Threshold Voltage | 0.3 ~ 3.9 V |
| Input Capacitance | 30 pF |
| Output Capacitance | 142 pF |
The device is available in a TO-92 package.
The maximum continuous drain current at 25°C is 200 mA.
The operating junction and storage temperature range is from -55 to +150 °C.