This document is the datasheet of FDY100PZ Single P-Channel (-2.5V) Specified PowerTrench MOSFET.
This document is a datasheet for the Fairchild FDY100PZ, a Single P-Channel MOSFET designed using the PowerTrench process. It is specified for a drain-source voltage of -20V and a continuous drain current of 350 mA. The device is RoHS compliant and includes an ESD protection diode between the gate and source.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | 350 mA |
| Pulsed Drain Current | 1000 mA |
| Power Dissipation | 625 mW |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 200 °C/W |
Yes, the device is RoHS compliant.
It serves only as protection against ESD.