Key facts
- Brand
- Micron
- Model
- X16
- Industry
- Industrial
- Documents
- 15
- Languages
- EN
- Last added
- 2012-03-28
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MICRON SYNCHRONOUS DRAM ADVANCE 128 MEG:x4 x8 x16 SDRAM
The 128‑Mb Micron SDRAM is a high‑speed, fully synchronous DRAM available in three density configurations (32 M‑bit x4, 16 M‑bit x8, 8 M‑bit x16). It uses a 54‑pin TSOP package and operates from a single +3.3 V +0.3 V supply. All signals are registered on the positive edge of the clock, enabling pipelined operation and high‑speed random access.
Key features include PC100 compliance, concurrent auto‑precharge, programmable burst lengths (1, 2, 4, 8 or full page), LVTTL‑compatible I/O, and a refresh interval of 64 ms (4,096 cycles). The datasheet provides functional block diagrams, pin descriptions, timing parameters, and power‑management modes such as auto‑refresh, self‑refresh, power‑down and clock‑suspend.
Micron X16 specifications
| Supply Voltage | +3.3 V +0.3 V |
|---|---|
| Package | 54‑pin TSOP (400 mil) |
| Maximum Clock Frequency | 125 MHz (6 ns cycle) |
| Burst Lengths | 1, 2, 4, 8 or full page |
| Refresh Interval | 64 ms, 4,096‑cycle refresh |
| I/O Compatibility | LVTTL‑compatible inputs and outputs |
Source: MICRON SYNCHRONOUS DRAM ADVANCE 128 MEG:x4 x8 x16 SDRAM
All Micron X16 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- MICRON SYNCHRONOUS DRAM ADVANCE 128 MEG:x4 x8 x16 SDRAM 51 p
- MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 SDRAM Features 68 p
- MICRON SYNCHRONOUS DRAM16Mb x16 SDRAM 51 p
- Micron 128Mb x4/x8/x16 SDRAM Datasheet 59 p
- Micron 256Mb SDRAM (x4, x8, x16) Datasheet 77 p
- Micron 512Mb SDRAM (x4/x8/x16) Datasheet 55 p
- MICRON SYNCHRONOUS DRAM 256Mb 16 Meg x16 8 Meg x 32 Mobile SDRAM Features 71 p
- MICRON SYNCHRONOUS DRAM 512Mb 32 Meg x16 Meg x 32 Mobile SDRAM Features 73 p
- MICRON SYNCHRONOUS DRAM 256Mb x16 Mobile SDRAM 58 p
- Micron DDR333 SDRAM 256Mb x4/x8/x16 Datasheet Addendum 8 p
- Micron 128Mb DDR SDRAM (x4, x8, x16) Datasheet 68 p
- MICRON SYNCHRONOUS DRAM 128Mb x4 x8 x16 DDR333 SDRAM Addendum 8 p
- MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 DDR SDRAM 68 p
- MICRON SYNCHRONOUS DRAM 1Gb x4 x8 x16 DDR SDRAM 74 p
- Micron 1Gb Mobile LPDDR SDRAM x16/x32 Datasheet 95 p
Questions answered in these manuals
What supply voltage does the Micron 128‑Mb SDRAM require?
It operates from a single +3.3 V +0.3 V power supply.
From: MICRON SYNCHRONOUS DRAM ADVANCE 128 MEG:x4 x8 x16 SDRAM
What burst lengths are supported by this SDRAM?
The device supports programmable burst lengths of 1, 2, 4, 8 or a full‑page burst.
From: MICRON SYNCHRONOUS DRAM ADVANCE 128 MEG:x4 x8 x16 SDRAM
What burst lengths does the Micron 512Mb SDRAM support?
It supports programmable burst lengths of 1, 2, 4, 8, or a full page.
From: MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 SDRAM Features
What supply voltage is required for the Micron 512Mb SDRAM?
The device operates from a single +3.3 V supply.
From: MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 SDRAM Features
What supply voltage does the MT48LC1M16A1 require?
It operates from a single +3.3 V + 0.3 V power supply.
Which CAS latencies are supported by this SDRAM?
The device supports CAS latencies of 1, 2, or 3 clock cycles.