This document describes the features and specifications of Micron's 512Mb SDRAM product. The product is a synchronous DRAM that is compliant with PC100 and PC133 standards, and it has features such as fully synchronous operation and internal pipelined operation.
The Micron 512Mb SDRAM is a high‑speed CMOS dynamic random‑access memory available in x4, x8, and x16 data‑width configurations. It features a fully synchronous interface with all signals registered on the positive edge of the system clock and an internal pipelined architecture that allows column address changes each clock cycle.
Key features include programmable burst lengths (1, 2, 4, 8, or full page), auto‑precharge and auto‑refresh modes, self‑refresh, power‑down operation, and LVTTL‑compatible I/O. The device is supplied in a 54‑pin TSOP II plastic package and operates from a single 3.3 V supply across commercial and industrial temperature ranges.
| Capacity | 512 Mbit (536,870,912 bits) |
|---|---|
| Data‑width configurations | x4, x8, x16 |
| Supply voltage | 3.3 V |
| Burst lengths | 1, 2, 4, 8, full page |
| Refresh count | 8,192 cycles (64 ms) |
| Operating temperature (commercial) | 0 °C to +70 °C |
| Package type | 54‑Pin TSOP II (400 mil) plastic |
| Access time (133 MHz, CL=2) | 5.4 ns |
It supports programmable burst lengths of 1, 2, 4, 8, or a full page.
The device operates from a single +3.3 V supply.
Commercial version: 0 °C to +70 °C; Industrial version: 40 °C to +85 °C.
It is supplied in a 54‑Pin TSOP II (400 mil) plastic package.