Micron Manuals

MT48LC128M4A2, MT48LC64M8A2 and MT48LC32M16A2 are Micron 512Mb SDRAM series products, supporting PC100- and PC133-compliant, support multiple refresh modes, LVTTL-compatible inputs and outputs, power supply is +3.3V ±0.3V

This document discusses the configuration and specifications of the 64Mb x4, x8, x16 SDRAM products produced by Micron Technology, Inc. The products are PC66, PC100, and PC133 compliant, fully synchronous, with internal pipelined operation, and the column address can be changed every clock cycle.

This document introduces the features and characteristics of 1Gb DDR SDRAM, including voltage, data transmission speed, interface type, etc.

MT47H128M4 is a DDR2 SDRAM memory module from the MT47H series. It uses a 4n-bit prefetch architecture, supports programmable CAS latency, supports 4/8-bit burst length, adjustable data output drive strength, has a 64ms, 8192-cycle refresh cycle, and supports JEDEC clock jitter specifications.

Features of 256Mb DDR SDRAM products, including VDD, VDDQ, Bidirectional data strobe (DQS) etc.

MT48LC64M4A2 is 16M x 4 x 4 banks SDR SDRAM, which has PC100- and PC133-compliant, fully synchronous, internal, pipelined operation, internal banks, programmable burst lengths, auto precharge, self refresh mode, auto refresh, LVTTL-compatible inputs and outputs, single +3.3V ±0.3V power supply etc.

This technical note highlights the importance of wear leveling, explains two primary wear- leveling techniques—static and dynamic—and calls attention to other considerations involved in implementing wear leveling.

MT46H64M16LF and MT46H32M32LF are two low-power DDR memories that support 1.8V voltage and adopt the double data rate (DDR) architecture. Two data accesses can be performed per clock cycle. There are 4 internal banks that support concurrent operation.

1Gb NAND Flash Memory Features

MT46H16M16LF is a mobile DDR SDRAM product released by Micron Technology. The product uses bidirectional data strobes, supports 1.8V voltage, and internally uses a dual-channel architecture to achieve two data accesses per cycle. The product has four internal banks that can perform concurrent operations. In addition, the product also supports programmable burst lengths, auto refresh and self refresh modes.

MT46H8M16 is a DDR SDRAM chip produced by Micron Technology, Inc. It has 2 Meg x 16 x 4 Banks and four internal banks for concurrent operation.

This document describes the features and characteristics of Micron's 1Gb DDR SDRAM products, including voltage, data storage mode, clock inputs, command inputs, data transmission mode, etc.