The document discusses the technical specifications and features of Micron Technology, Inc.'s 512Mb SDRAM. The product supports different configurations and speeds, and offers high synchronicity and internal pipelined operation.
The Micron 512 Mb SDRAM family is a high‑speed synchronous DRAM built as a quad‑bank device. It is offered in three data‑width configurations (x4, x8, x16) with each bank organized as 8,192 rows by a column depth appropriate to the width.
Key features include PC100/PC133 compliance, LVTTL‑compatible I/O, programmable burst lengths (1, 2, 4, 8, full page), auto‑precharge, a 64 ms self‑refresh (8192‑cycle) mode, and operation from a single +3.3 V + 0.3 V supply. The device is supplied in a 54‑pin TSOP II package.
| Capacity | 512 Mb |
|---|---|
| Data‑width options | x4, x8, x16 |
| Supply voltage | +3.3 V + 0.3 V |
| Interface | PC100 and PC133 compliant |
| Burst lengths | 1, 2, 4, 8, full page |
| Self‑refresh | 64 ms, 8192‑cycle |
| I/O standard | LVTTL‑compatible |
| Package | 54‑pin TSOP II (400 mil) |
The device operates from a single +3.3 V + 0.3 V power supply.
It supports programmable burst lengths of 1, 2, 4, 8, or a full‑page burst.
At CL = 2 the access time is 5.4 ns (setup 1.5 ns, hold 0.8 ns).
The SDRAM is supplied in a 54‑pin TSOP II (400 mil) package.