MT46H64M16LF and MT46H32M32LF are two low-power DDR memories that support 1.8V voltage and adopt the double data rate (DDR) architecture. Two data accesses can be performed per clock cycle. There are 4 internal banks that support concurrent operation.
This Micron data sheet describes the 1 Gb Mobile low‑power DDR SDRAM, available in x16 and x32 data‑bus widths. It details the memory architecture, package options, electrical characteristics, and command set.
The document includes timing tables, package dimensions, power‑down modes, and revision history, providing engineers with the specifications needed for system design and integration.
| Operating voltage | 1.8 V |
|---|---|
| Refresh cycle time (CL=3) | 5 ns |
| Burst lengths | 2, 4, 8, 16 |
The device is available in x16 and x32 configurations.
Burst lengths of 2, 4, 8, or 16 are programmable.
Two VFBGA packages are offered: 60‑ball (10 mm × 11.5 mm) and 90‑ball (10 mm × 13 mm).