512Mb: x4, x8, x16 DDR SDRAM is a DDR memory product produced by Micron Technology, Inc., with a double data rate (DDR) architecture that can access data twice per clock cycle.
The Micron 512Mb DDR SDRAM data sheet provides a detailed description of the high‑speed CMOS memory, its architecture, and supported configurations (128 M x4, 64 M x8, 32 M x16). It includes functional block diagrams, pin descriptions, command tables, and timing parameters for designers.
Key sections cover operating modes, power‑down and refresh options, electrical characteristics, and package dimensions for the 66‑pin TSOP. The document also lists programmable burst lengths, data‑mask functionality, and voltage requirements, making it a comprehensive reference for hardware engineers.
| Capacity | 512 Mb (536,870,912 bits) |
|---|---|
| Supply Voltage | +2.5 V ±0.2 V |
| Package | 66‑pin TSOP, 22.3 mm length, 0.65 mm pitch |
| Burst Length Options | 2, 4, or 8 |
| Cycle Time (CL=2) | 7.5 ns |
| Data Mask (DM) | Input mask for write data |
It operates from a +2.5 V supply with a ±0.2 V tolerance.
The device is supplied in a 66‑pin TSOP package (22.3 mm length, 0.65 mm pitch).
The memory supports programmable burst lengths of 2, 4, or 8 data words.