MT48H16M16LF is a mobile SDRAM. This document introduces its features and characteristics, including: full synchronous, VDD/VDDQ = 1.70–1.95V, internal, pipelined operation, four internal banks, programmable burst lengths, auto precharge, auto refresh and self refresh modes, LVTTL-compatible inputs and outputs, on-chip temperature sensor, partial-array self refresh, deep power-down, selectable output drive, 64ms refresh period, etc.
The MT48H16M16LF is a 256‑Mb mobile SDRAM from Micron that operates at 1.8 V and offers a fully synchronous interface with four internal banks. It supports programmable burst lengths of 1, 2, 4, 8 or continuous page, auto‑precharge, auto‑refresh, self‑refresh, deep power‑down and selectable output drive.
The document lists electrical specifications, timing parameters, pin‑out and ball assignments for the 54‑ball and 90‑ball VFBGA packages, functional block diagrams, register definitions, command descriptions and detailed timing diagrams to aid designers in integrating the part.
| Supply Voltage | 1.70–1.95 V |
|---|---|
| Internal Banks | 4 |
| Burst Lengths | 1, 2, 4, 8, continuous page |
| Refresh Period | 64 ms (8,192 rows) |
| Operating Temperature (Commercial) | 0 °C to +70 °C |
It operates from a VDD/VDDQ supply of 1.70 V to 1.95 V.
The device contains four internal banks for concurrent operation.
Burst lengths of 1, 2, 4, 8 or continuous page can be programmed.