The 128‑Mb Micron SDRAM is a high‑speed, fully synchronous DRAM available in three density configurations (32 M‑bit x4, 16 M‑bit x8, 8 M‑bit x16). It uses a 54‑pin TSOP package and operates from a single +3.3 V +0.3 V supply. All signals are registered on the positive edge of the clock, enabling pipelined operation and high‑speed random access.
Key features include PC100 compliance, concurrent auto‑precharge, programmable burst lengths (1, 2, 4, 8 or full page), LVTTL‑compatible I/O, and a refresh interval of 64 ms (4,096 cycles). The datasheet provides functional block diagrams, pin descriptions, timing parameters, and power‑management modes such as auto‑refresh, self‑refresh, power‑down and clock‑suspend.
| Supply Voltage | +3.3 V +0.3 V |
|---|---|
| Package | 54‑pin TSOP (400 mil) |
| Maximum Clock Frequency | 125 MHz (6 ns cycle) |
| Burst Lengths | 1, 2, 4, 8 or full page |
| Refresh Interval | 64 ms, 4,096‑cycle refresh |
| I/O Compatibility | LVTTL‑compatible inputs and outputs |
It operates from a single +3.3 V +0.3 V power supply.
The device supports programmable burst lengths of 1, 2, 4, 8 or a full‑page burst.
The SDRAM can operate up to 125 MHz, corresponding to a 6 ns cycle time.
It requires a refresh interval of 64 ms, which equals 4,096 refresh cycles.