This document is a technical datasheet for the Toshiba SSM3K04FS, an N-channel silicon MOS field-effect transistor designed for high-speed switch applications. The device features a built-in gate-source resistor (Rgs = 1 MΩ typical) and operates with a low gate threshold voltage of 0.7 to 1.3V.
| Drain-Source Voltage (VDS) | 20 V |
|---|---|
| Gate-Source Voltage (VGSS) | 10 V |
| DC Drain Current (ID) | 100 mA |
| Drain Power Dissipation (Pd) | 100 mW |
| Channel Temperature (Tch) | 150 °C |
| Gate Threshold Voltage (Vth) | 0.7 ~ 1.3 V |
| Drain-Source ON Resistance (RDS(ON)) | 4 Ω |
The maximum drain-source voltage rating is 20 V.
The maximum DC drain current is 100 mA.
The typical gate-source resistor value is 1 MΩ.