SSM3K11T is a Toshiba field-effect transistor silicon N-channel MOS type (lateral) device. It is suitable for high-speed switching applications in DC-DC converters, featuring ultra-high-speed switching, low reverse transfer capacitance, thin package, and low ON-resistance.
This document is a datasheet for the Toshiba SSM3K11T, a silicon N-channel MOS type (lateral) field effect transistor. It is designed for high-speed switching applications, achieving a turn-on time of 6.4 ns and a turn-off time of 4.9 ns. The device features low reverse transfer capacitance and low ON-resistance, allowing for direct drive by CMOS logic.
| Drain-Source voltage | 40 V |
|---|---|
| Gate-Source voltage | +10 V |
| DC Drain current | 500 mA |
| Pulse Drain current | 2 A |
| Drain power dissipation | 1250 mW |
| Channel temperature | 150 °C |
| Turn-on time | 6.4 ns |
| Turn-off time | 4.9 ns |
| Reverse transfer capacitance | 6.8 pF |
| ON resistance | 1.2 Ω |
The recommended voltage to turn on this product is 2.5 V or higher.
The maximum channel temperature is 150 °C.