SSM3K17FU is a high-end field effect transistor produced by Toshiba. It features high voltage, high speed and high density, and is suitable for high-density mounting, high-voltage switching and analog switching applications.
The document is a technical specification sheet for the Toshiba SSM3K17FU, an N-channel Field Effect Transistor designed for high-speed switching applications. It details maximum ratings such as a drain-source voltage of 50V and a continuous drain current of 100mA.
| Drain-Source Voltage (Vds) | 50 V |
|---|---|
| Gate-Source Voltage (Vgs) | +7 V |
| Drain Current (Idc) | 100 mA |
| Pulse Drain Current (Ipp) | 200 mA |
| Drain Power Dissipation | 150 mW |
| Channel Temperature (Tch) | 150 °C |
| Gate Threshold Voltage (Vth) | 0.9 to 1.5 V |
| Forward Transfer Admittance (Yfs) | 20 to 40 mS |
| Drain-Source ON Resistance (Rds(on)) | 22 to 40 Ohms |
| Input Capacitance (Ciss) | 7 pF |
The channel temperature is rated up to 150°C and the storage temperature range is -55°C to 150°C.
Yes, the compact package makes it suitable for high-density mounting.
The typical weight of the transistor is 6 mg.