The SSM3K17FU is a high voltage, high frequency switch field effect transistor with a small package and high reliability.
This document is a datasheet for the Toshiba SSM3K17FU, a silicon N-channel MOSFET designed for high-speed switching and analog switch applications. The device features a compact package suitable for high-density mounting and is rated for a drain-source voltage of 50V and a drain current of 100mA.
The datasheet provides absolute maximum ratings, electrical characteristics, and graphical data regarding on-resistance, capacitance, and switching times under various conditions. It also includes usage restrictions, noting that the product is intended for general electronics applications and not for safety-critical equipment like medical instruments or transportation controls.
| Drain-Source voltage | 50 V |
|---|---|
| Gate-Source voltage | 47 V |
| Drain current | 100 mA |
| Pulse current | 200 mA |
| Drain power dissipation | 150 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Gate threshold voltage | 0.9 ~ 1.5 V |
| Weight | 6 mg (typ.) |
No, it is not intended for equipment where failure could cause loss of human life or bodily injury.
The typical weight is 6 mg.