This document describes the features and characteristics of the TOSHIBA SSM3K05FU field effect transistor, including small package size, low on resistance, and low gate threshold voltage.
This document is a datasheet for the TOSHIBA SSM3K05FU, a silicon N-channel MOSFET designed for high-speed switching applications. The device features a small package with low on-resistance (Ron) and a low gate threshold voltage. Key specifications include a maximum drain-source voltage of 20V and a maximum drain current of 400mA.
| Storage temperature range | -55~150 °C |
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The environment must be protected against electrostatic electricity, and operators should wear anti-static clothing.
The maximum power dissipation is 150 mW when the ambient temperature is 25°C.