TOSHIBA SSM3K16FU handbook

About this manual

This document is a datasheet for the Toshiba SSM3KO04FU, a high-speed switch application N-channel MOSFET. It features a built-in gate-source resistor (Rgs) of 1 MΩ (typical) and is designed for low gate threshold voltage applications (Vth = 0.7~1.3V). The device is housed in a small package with a maximum drain-source voltage rating of 20V.

What's inside

• Maximum Ratings
• Electrical Characteristics
• Switching Time
• Equivalent Circuit
• Switching Time Test Circuit
• Graphs

Frequently asked questions

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage is 20 V.

What is the maximum DC drain current this device can handle?

The maximum DC drain current is 100 mA.

What is the maximum power dissipation at an ambient temperature of 25°C?

The maximum drain power dissipation is 100 mW.