This document describes the features and characteristics of TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU, which is suitable for high-speed switching applications and has small package size and low on-resistance.
This document is a datasheet for the Toshiba SSM3KO9FU, a silicon N-channel MOSFET designed for high-speed switching applications. Key features include a low on-resistance of 0.7 Ω maximum at VDS=10V and a small package size of 25.4 mm x 25.4 mm x 1.6 mm.
The datasheet provides absolute maximum ratings, such as a drain-source voltage of 30V and a drain current of 400A. It also lists detailed electrical characteristics including gate threshold voltage, switching times, and capacitance values under specific test conditions.
| Drain-Source voltage | 30 V |
|---|---|
| Gate-Source voltage | +20 V |
| Channel temperature | 150 °C |
| Storage temperature | -55~150 °C |
| Package dimensions | 25.4 mm x 25.4 mm x 1.6 mm |
The maximum drain-source voltage is 30 V.
The absolute maximum drain-source voltage rating is 30 V.
When mounted on an FR4 board, the maximum drain power dissipation is 150 mW at 25°C.
The package measures 25.4 mm x 25.4 mm x 1.6 t.