This document describes the TOSHIBA SSM3K14T field effect transistor, which is a small package product used for high-speed switching applications in DC-DC converters. It features low ON-resistance and high speed switching.
This document is a technical datasheet for the Toshiba SSM3K14T, an N-channel Field Effect Transistor (MOS Type U-MOSII). The device is designed for high-speed switching applications and features a small 2.8mm x 2.8mm package with a low ON resistance of up to 57 mΩ at VGS = 4.5V.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-source voltage of 30V and a continuous drain current of 4A. It details performance metrics like turn-on time (typical 24 ns) and turn-off time (typical 19 ns), along with graphs illustrating the relationship between ON resistance, threshold voltage, and ambient temperature.
| Gate-Source voltage (VGSS) | +20 V |
|---|---|
| Drain current (ID) | 4.0 A |
| Pulse drain current (Ipp) | 8.0 A |
| Drain power dissipation (Ta = 25°C) | 0.7 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature range (Tstg) | -55 ~ 150 °C |
| Drain-Source ON resistance (VGS=4.5V) | Max 57 mΩ |
| Turn-on time (ton) | Typ 24 ns |
| Turn-off time (toff) | Typ 19 ns |
The datasheet recommends a gate-source voltage of 4 V or higher to ensure proper switching operation.
The datasheet recommends applying a gate-source voltage of 4 V or higher to turn on this product.