SSM3K16FU is a N-channel MOSFET transistor produced by Toshiba. It is suitable for high-density mounting and high-performance switching applications. Its features are low on resistance, the maximum working voltage is 20V, the maximum working current is 100mA, and the maximum power consumption is 150mW.
This document is a datasheet for the Toshiba SSM3K16FU, a silicon N-channel MOSFET designed for high-speed and analog switching applications. The device features a compact package suitable for high-density mounting and a low on-resistance of 3.0 Ω maximum at Vgs = 4V. It is intended for general electronics applications such as computers, office equipment, and industrial robotics, but is not warranted for use in safety-critical systems like medical instruments or transportation controls.
| Drain-Source voltage | 20 V |
|---|---|
| Gate-Source voltage | +10 V |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Drain-Source ON resistance | 3.0 Ω (max) |
The recommended gate voltage is 1.5 V or higher.
The device supports a maximum drain-source voltage of 20 V and a maximum drain power dissipation of 150 mW when mounted on an FR4 board.
A gate-source voltage of 1.5 V or higher is required for normal switching operation.
The package measures 25.4 mm x 25.4 mm x 1.6 t with a copper pad of 0.6 mm* x 3.