SSM3K16TE is a N-channel MOSFET produced by Toshiba. It features high switching speed and low on-resistance, making it suitable for high-density packaging and analog switch applications.
This document is a datasheet for the Toshiba SSM3K16TE, a silicon N-channel field effect transistor designed for high-speed switching and analog switch applications. It highlights a compact package suitable for high-density mounting and provides key performance metrics such as low on-resistance and fast switching times.
| Drain-Source voltage | 20 V |
|---|---|
| Gate-Source voltage | +10 V |
| Pulse Drain current | 200 mA |
| Drain power dissipation | 100 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Gate leakage current | 41 pA |
| Gate threshold voltage | 0.6 to 1.1 V |
| Drain-Source ON resistance | 3.0 Q (max) |
The recommended gate voltage is 1.5 V or higher to turn on this product.
Yes, it is suitable for high-density mounting due to its compact package.
It is intended for high-speed switching applications and analog switch applications.