This document is a technical datasheet for the Toshiba SSM3K04FE, an N-channel silicon field-effect transistor designed for high-speed switch applications. The device features a built-in gate-source resistor (Rgs = 1 MΩ typical) and operates with a low gate threshold voltage of 0.7 to 1.3V.
| Drain-Source Voltage (VDS) | 20 V |
|---|---|
| Gate-Source Voltage (VGSS) | 10 V |
| DC Drain Current (ID) | 100 mA |
| Drain Power Dissipation (PD) | 100 mW |
| Channel Temperature (Tch) | 150 °C |
The built-in gate-source resistor has a typical value of 1 MΩ.
The device can be stored in a temperature range of -55 to 150 °C.