SSM3K03FE is a N-channel MOS field effect transistor produced by TOSHIBA. Its characteristics are 2.5V gate drive, high input impedance, low gate threshold voltage (Vth=0.7~1.3V) and small package.
This document is a technical datasheet for the Toshiba SSM3K03FE, an N-channel silicon Field Effect Transistor (MOS Type). It is designed for high-speed switching and analog switch applications. The device features a small package with low gate threshold voltage and high input impedance.
| Drain-source voltage (VDS) | 20 V |
|---|---|
| Gate-source voltage (VGSS) | 10 V |
| DC drain current (ID) | 100 mA |
| Drain power dissipation (PD) | 100 mW |
| Channel temperature (Tch) | 150 °C |
| Gate threshold voltage (Vth) | 0.7 ~ 1.3 V |
The device supports a maximum drain-source voltage of 20 V and a maximum gate-source voltage of 10 V.
The typical weight of the component is 2.3 mg.