SSM3K02F is a N-channel MOS transistor produced by Toshiba. Its main characteristics include low resistance, low gate threshold voltage, and high switching speed.
This document is a datasheet for the TOSHIBA SSM3K02F, a high-speed switching N-channel MOSFET designed for general electronics applications. The device features a low on-resistance of 200 mΩ maximum and a gate threshold voltage between 0.6 and 1.1 V. It is packaged in a small JEDEC TO-236 format with a typical weight of 0.012 g.
| Drain-source voltage | 30 V |
|---|---|
| Gate-source voltage | +10 V |
| Drain current | 10 A |
| Pulse current | 2.0 A |
| Drain power dissipation | 200 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Package type | JEDEC TO-236MOD |
| On-resistance (Vgs=4V) | 200 mΩ (max) |
| On-resistance (Vgs=2.5V) | 250 mΩ (max) |
A recommended voltage of 2.5 V or higher is required to turn on this product.
The maximum channel temperature is 150 °C.
No, the product is not intended for usage in medical instruments or other unintended usage applications.