This document describes the features and characteristics of the SSM3K01T TOSHIBA Field Effect Transistor, including high-speed switching applications, small package, low on resistance, and low gate threshold voltage.
This document is a technical datasheet for the Toshiba SSM3K01T, a silicon N-channel MOS type field effect transistor designed for high-speed switching applications. It features a small package with low on-resistance and low gate threshold voltage. The document provides comprehensive electrical specifications, including maximum ratings, electrical characteristics, and capacitance values.
| Drain-Source voltage | 30 V |
|---|---|
| Gate threshold voltage | 0.6~1.1 V |
| Drain-Source ON resistance (V GS = 4 V) | 120 mΩ (max) |
| Drain-Source ON resistance (V GS = 2.5 V) | 150 mΩ (max) |
A gate voltage of 2.5 V or higher is recommended to turn on this product.
The device supports a maximum drain-source voltage of 30 V, with a gate leakage current that is less than or equal to 10 nA under specific test conditions.
To turn on the product, a gate-source voltage of 2.5 V or higher is recommended, while the off state requires a voltage lower than the threshold.
The device can handle a maximum pulsed drain current of 6.4 A and a maximum continuous drain current of 3.2 A.