SSM3J14T is a P-channel MOS type field effect transistor produced by Toshiba. It is suitable for power management switch DC-DC converters and has the advantages of small size, high-speed switching and low resistance.
This document is a technical datasheet for the TOSHIBA SSM3J14T, a Field Effect Transistor (FET) of the Silicon P Channel MOS Type (U-MOSII). It serves as a Power Management Switch designed for applications requiring compact packaging and high-density mounting. The device features low on-resistance values, with maximum ratings specified at 145 mΩ when Vgs is -4.5V.
| Drain-Source voltage (Vds) | -30 V |
|---|---|
| Gate-Source voltage (Vgs) | +20 V |
| Drain current (continuous) | 3 A |
| Pulse Drain current | 5.4 A |
| Drain power dissipation (Ta=25°C) | 1.25 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature range | -55 to 150 °C |
| Gate threshold voltage (Vth) | 0.8 to -2.0 V |
| Drain-source on resistance (Rds(on)) | Max 145 mΩ @ Vgs=-4.5V |
| Turn-on time (ton) | Max 29 ns |
The recommended voltage of -4 V or higher should be used to turn on this product.