SSM3J13T is a P-channel MOS type field effect transistor produced by TOSHIBA. It has the characteristics of small package, low on resistance, low gate threshold voltage, and is suitable for high frequency switching applications.
This document is a datasheet for the Toshiba SSM3J13T, a Silicon P Channel MOS Type (U-MOSII) Power Management Switch. It is designed for high-speed switching applications and features a small package with low on-resistance (Ron) of 70 mΩ maximum at Vas = -4V. The device operates with a low gate threshold voltage and is suitable for general electronics applications.
| Drain-Source voltage | -12 V |
|---|---|
| Gate-Source voltage | +8 V |
| Drain power dissipation | 4.25 W |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Drain-Source ON resistance | 70 mΩ (max) |
The recommended voltage is -2.5 V or higher to turn on this product.
The maximum channel temperature is 150 °C.