SSM3J117TU is a high performance 4V-driven P-channel MOSFET with low ON-resistance and high switching speed.
This document is a datasheet for the Toshiba SSM3J117TU, a silicon P-Channel MOSFET designed for high-speed switching applications. Key features include a low on-resistance of 117 mΩ maximum at Vgs = -10V and a drain-source breakdown voltage of -30V. The device is optimized for use in 4V drive units.
| Drain-source breakdown voltage | -30 V |
|---|---|
| Gate-source voltage | +20 V |
| Channel temperature | 150 °C |
| Drain-source ON-resistance (Vgs=-4V) | 225 mΩ (max) |
| Drain-source ON-resistance (Vgs=-10V) | 117 mΩ (max) |
| Gate threshold voltage | -1.2 to -2.6 V |
The maximum on-resistance is 225 mΩ at Vgs = -4V and 117 mΩ at Vgs = -10V.
The channel temperature is rated up to 150°C, and the storage temperature range is -55 to 150°C.
No, the product is not intended for use in equipment requiring extraordinarily high quality or reliability, such as medical instruments or safety devices.