This document describes the absolute maximum ratings and electrical characteristics of the FJX733 PNP epitaxial silicon transistor, including voltage, current, power, etc. The transistor is suitable for low frequency amplifier applications.
This document provides the design specifications for the FJX733 PNP epitaxial silicon transistor. It includes absolute maximum ratings such as a collector-base voltage of -60V and a junction temperature of 150°C. The datasheet also lists electrical characteristics including DC current gain, breakdown voltages, and noise figure under specific test conditions.
| Collector-Base Voltage | -60 V |
|---|---|
| Collector-Emitter Voltage | -50 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | -150 mA |
| Collector Power Dissipation | 200 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
| DC Current Gain | 40 to 700 |
| Current Gain Bandwidth Product | 50 to 180 MHz |
The device is packaged in an SOT-323 package.
The maximum junction temperature is 150 °C.
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