This document describes the features and characteristics of the 2N6517 NPN Epitaxial Silicon Transistor, including high voltage, collector dissipation, complement to 2N6520, etc.
This document is a technical datasheet for the Fairchild Semiconductor 2N6517, an NPN epitaxial silicon transistor designed as a high-voltage device. It serves as a reference for product development, containing design specifications that may change without notice.
The datasheet provides absolute maximum ratings and electrical characteristics such as collector-emitter voltage, current gain, and switching times. It also includes typical performance characteristics graphs and physical dimensions for the TO-92 package.
| Collector Dissipation | 625 mW |
|---|---|
| Collector-Base Voltage (Max) | 350 V |
| Collector-Emitter Voltage (Max) | 350 V |
| Emitter-Base Voltage (Max) | 6 V |
| Collector Current (Max) | 500 mA |
The maximum collector power dissipation is 625 mW.
The collector-base voltage rating is 350 V, and the collector-emitter voltage rating is 350 V.
The maximum junction temperature is 150 °C.