This document describes the absolute maximum ratings and electrical characteristics of the KSA812 PNP epitaxial silicon transistor, including current gain, saturation voltage, and on voltage. In addition, it provides pinout diagram and hFE classification information.
This document is a technical datasheet for the Fairchild Semiconductor KSA812, a low-frequency PNP epitaxial silicon transistor. It serves as a complement to the KSC1623 model and provides comprehensive specifications for electronic design applications.
The datasheet outlines absolute maximum ratings such as collector-base voltage of -60V and collector power dissipation of 150mW. It also includes electrical characteristics like DC current gain ranging from 90 to 600, along with typical performance curves for saturation voltage and capacitance.
| Collector-Base Voltage (Vocpo) | -60 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -50 V |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (lo) | -100 mA |
| Collector Power Dissipation (Po) | 150 mW |
| Junction Temperature (Ty) | 150 °C |
| DC Current Gain (Nee) | 90 ~ 600 |
| Current Gain Bandwidth Product (fr) | 180 MHz |
Yes, it is a complement to the KSC1623 model.
The storage temperature range is -55 °C to 150 °C.