This document presents the absolute maximum ratings and electrical characteristics of the KSA733 PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor Corporation. The transistor is designed for low-frequency amplifier applications and features collector-base voltage, collector-emitter voltage, and emitter-base voltage, among others.
This document provides the design specifications for the Fairchild Semiconductor KSA733, a PNP epitaxial silicon transistor. It serves as a reference for product development and full production specifications, covering electrical parameters such as collector current, voltage ratings, and current gain.
| Collector-Base Voltage | -60 V |
|---|---|
| Collector-Emitter Voltage | -50 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | -150 mA |
| Collector Power Dissipation | 250 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
The DC current gain (hFE) ranges from 40 to 700 under test conditions of Voge -6V and Io= -1mA.
The suffix 'C' indicates a Center Collector configuration with pinout: 1. Emitter, 2. Collector, 3. Base.