KSA643 is a PNP type low frequency power amplifier from Fairchild Semiconductor Corporation. It has a maximum collector current of 500mA, a maximum collector-emitter reverse voltage of -40V and a maximum emitter-base reverse voltage of -20V. The device is packaged in a TO-92 package and has a working temperature range of -55~150℃.
This document is a technical datasheet for the Fairchild Semiconductor KSA643 PNP epitaxial silicon transistor. It serves as a complement to the KSD261 series and features a center collector configuration when the suffix 'C' is used.
The datasheet provides comprehensive electrical specifications, including absolute maximum ratings such as a collector power dissipation of 500mW and a junction temperature limit of 150°C. It also lists key electrical characteristics like breakdown voltages for collector-base, collector-emitter, and emitter-base terminals, along with DC current gain ranges.
| Collector Power Dissipation (Pe) | 500 mW |
|---|---|
| Junction Temperature (Tj) | 150 °C |
| Collector-Base Voltage (Vocpo) | -40 V |
| Collector-Emitter Voltage (VoEo) | -20 Vv |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (DC) (lo) | -500 mA |
The suffix 'C' indicates a Center Collector configuration with pinout: 1. Emitter, 2. Collector, 3. Base.
The DC current gain (hee) ranges from a minimum of 40 to a maximum of 400 under specified test conditions.