This document presents the absolute maximum ratings and electrical characteristics of the KSA1182 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. The transistor is suitable for low-frequency power amplifiers and complements the KSC2859. The document provides information on the transistor's maximum rated voltage, maximum power dissipation, junction temperature, and storage temperature, among others. Typical curves for static characteristics, DC current gain, base-emitter saturation voltage, and collector output capacitance are also included.
The document describes the KSA1182, a PNP epitaxial silicon transistor designed as a low-frequency power amplifier. It serves as a complement to the KSC2859 model and is packaged in an SOT-23 package with three terminals: Base, Emitter, and Collector.
The datasheet details absolute maximum ratings including collector-base voltage of -35V and collector current of -500mA. It also lists electrical characteristics such as DC current gain ranging from 70 to 240 at specific test conditions and a current gain bandwidth product of 200 MHz.
| Collector-Base Voltage (Vocpo) | -35 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -30 Vv |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (lo) | -500 mA |
| Collector Power Dissipation (Po) | 150 mW |
| Junction Temperature (Ty) | 150 °C |
The DC current gain ranges from 70 to 240 under test conditions of Voge -1V and Io= -100mA.
The current gain bandwidth product is 200 MHz at a collector-base voltage of -6V and collector current of -20mMA.
The transistor uses an SOT-23 package.