This document is about the KSA916 datasheet. It is a PNP type silicon transistor manufactured by Fairchild Semiconductor Corporation. The datasheet provides the absolute maximum ratings, electrical characteristics, hFE classification, symbol parameters, test conditions, minimum values, typical values, maximum values, units, and figures.
This document is a technical datasheet for the Fairchild Semiconductor KSA916, a PNP epitaxial silicon transistor designed as an audio power amplifier driver stage. It serves as a complement to the KSC2316 model.
The datasheet provides absolute maximum ratings and electrical characteristics at 25°C, including collector-emitter breakdown voltage of -120V and DC current gain ranging from 80 to 240 depending on classification. It also includes typical characteristic curves for DC current gain, saturation voltage, safe operating area, and power derating.
| Collector-Base Voltage (Vocpo) | -120 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -120 V |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (lo) | -800 mA |
| Collector Power Dissipation (Po) | 900 mW |
| Junction Temperature (Ty) | 150 °C |
The DC current gain (hee) ranges from 80 to 160.
The typical value is 120.