KSA1015 is a PNP type silicon transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -50V, maximum collector-emitter reverse voltage is -50V, maximum collector-base reverse voltage is -5V, maximum collector current is -150mA, maximum base current is -50mA, maximum collector power dissipation is 400mW, maximum junction temperature is 125℃, minimum storage temperature is -65℃, and maximum storage temperature is 150℃.
This document is a datasheet for the Fairchild KSA1015, a PNP epitaxial silicon transistor designed as a low frequency amplifier. It serves as a complement to the KSC1815 model. The document provides comprehensive electrical specifications including collector-emitter breakdown voltage, DC current gain, and noise figure under specific test conditions.
| Collector-Base Voltage | -50 V |
|---|---|
| Collector-Emitter Voltage | -50 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | -150 mA |
| Base Current | -50 mA |
| Collector Power Dissipation | 400 mW |
| Junction Temperature | 125 °C |
| Storage Temperature | -65 ~ 150 °C |
| DC Current Gain | 70 ~ 400 |
| Current Gain Bandwidth Product | 80 MHz |
| Output Capacitance | 4 ~ 7 pF |
The complement model for the KSA1015 is the KSC1815.
The maximum junction temperature is 125 °C.