This document is about the absolute maximum ratings, electrical characteristics, classification, symbol, parameter, test condition, minimum value, typical value and maximum value of KSA539 PNP Epitaxial Silicon Transistor.
This document provides the design specifications for the KSA539 PNP epitaxial silicon transistor, which serves as a low-frequency amplifier and a complement to the KSC815 model. It lists absolute maximum ratings such as a collector-base voltage of -60V and a collector power dissipation of 400mW.
| Collector Power Dissipation | 400 mW |
|---|---|
| Collector Current | -200 mA |
| Junction Temperature | 150 °C |
| DC Current Gain | 40 ~ 240 |
The suffix 'C' indicates a Center Collector configuration.
The device can be stored between -55 °C and 150 °C.
The typical DC current gain is 240.