This document provides the absolute maximum ratings and electrical characteristics of the KSA1298 PNP epitaxial silicon transistor. The transistor is a low frequency power amplifier and is complementary to the KSC3265.
This document is a technical datasheet for the Fairchild Semiconductor KSA1298 PNP epitaxial silicon transistor. It serves as a complement to the KSC3265 model and provides comprehensive specifications for low frequency power amplifier applications.
The datasheet outlines absolute maximum ratings, including collector-emitter voltage of -25 V and a maximum junction temperature of 150 °C. It also details electrical characteristics such as DC current gain ranging from 40 to 320 and a current gain bandwidth product up to 120 MHz.
| Emitter-Base Voltage (Vebo) | 5 V |
|---|---|
| Collector Current (Ic) | -800 mA |
| DC Current Gain (hFE) Min | 100 |
| Current Gain Bandwidth Product (fT) | 120 MHz |
No, Fairchild products are not authorized for use as critical components in life support devices without express written approval.
The maximum collector current is 800 mA.
The maximum junction temperature is 150 °C.