The document describes the features and characteristics of the products.
This document provides the design specifications and electrical characteristics for the Fairchild 2N5550, an NPN epitaxial silicon transistor. It lists absolute maximum ratings such as a collector-emitter voltage of 140V and a collector current of 600mA, along with typical electrical parameters like current gain and noise figure.
| Collector Dissipation | 625 mW |
|---|---|
| Collector Current | 600 mA |
| Junction Temperature | 150 °C |
The maximum collector current is 600 mA.
The maximum junction temperature is 150 °C.