KSA708 is an NPN type silicon transistor, has the characteristics of low frequency amplifier and medium speed switching. The tube has -80V collector-base breakdown voltage, 800mW collector power dissipation, -0.7V collector-emitter saturation voltage and -1.1V base-emitter saturation voltage.
This document is a datasheet for the Fairchild Semiconductor KSA708, a PNP epitaxial silicon transistor designed for low frequency amplification and medium speed switching applications. It serves as a complement to the KSC1008 model. The document provides absolute maximum ratings, electrical characteristics, and typical performance curves for the device.
| Collector-Base Voltage | -80V |
|---|---|
| Collector Power Dissipation | 800mW |
| Collector Current | -700 mA |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
The suffix 'C' indicates a Center Collector configuration with pins 1 for Emitter, 2 for Collector, and 3 for Base.
The KSA708 is a PNP Epitaxial Silicon Transistor.