2N6520 is a high voltage PNP type transistor from Fairchild Semiconductor, with a collector-emitter breakdown voltage of -350V and a maximum collector power dissipation of 0.625W.
This document is a technical datasheet for the Fairchild Semiconductor 2N6520, a PNP epitaxial silicon transistor designed as a complement to the 2N6517. It features high voltage capabilities with a collector-emitter voltage rating of -350V and a maximum collector dissipation of 625mW.
| Collector-Emitter Voltage (VCEO) | -350 V |
|---|---|
| Collector Dissipation (PC) | 625 mW |
| Collector Current (IC) | -500 mA |
| Base Current (IB) | -250 mA |
| Junction Temperature (Tj) | 150 °C |
The maximum collector power dissipation is 0.625 W at a temperature of 25°C.