This document describes the absolute maximum ratings and features of the NDS8947 dual P-Channel enhancement mode field effect transistor, released in March 1996. The product is suitable for low voltage applications and offers fast switching, low power loss, and resistance to transients.
This document is a datasheet for the Fairchild Semiconductor NDS8947, a dual P-channel enhancement mode field effect transistor (FET) produced using proprietary DMOS technology. The device is designed for low voltage applications such as notebook computer power management and battery-powered circuits, offering fast switching and low in-line power loss.
| Drain Current (Pulsed) | -15 A |
|---|---|
| Power Dissipation (Dual) | 2 W |
| Power Dissipation (Single) | 1.6 W |
The power dissipation for dual operation is 2 W.
The device operates and stores within a temperature range of -55 to 150 °C.